Hung-Hsiang Cheng

Title: Innovations of Hung-Hsiang Cheng

Introduction

Hung-Hsiang Cheng is a prominent inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on methods to enhance the performance of semiconductor devices, particularly in controlling Schottky barrier heights.

Latest Patents

One of his latest patents is titled "Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height." This innovative method involves forming an alloy layer that includes at least a first element and a second element on a semiconductor substrate. The substrate is based on a first element, and both elements are classified as Group IV elements. The process includes a first thermal anneal of the alloy layer, which facilitates the migration of the second element towards the surface of the alloy layer. Following this, a Schottky contact layer is formed on the alloy layer, enhancing the device's efficiency.

Career Highlights

Hung-Hsiang Cheng has had a distinguished career, working with notable organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to develop and refine his innovative techniques in semiconductor technology.

Collaborations

He has collaborated with various professionals in his field, including his coworker Samuel C. Pan. Their joint efforts have contributed to advancements in semiconductor research and development.

Conclusion

Hung-Hsiang Cheng's contributions to semiconductor technology through his patents and career achievements highlight his role as a key innovator in the industry. His work continues to influence the development of more efficient semiconductor devices.