Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Hung-Hsiang Cheng

Samuel C Pan

A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second element on a first surface of a semiconductor substrate. The semiconductor substrate is a first element-based semiconductor substrate, and the first element and the second element are Group IV elements. A first thermal anneal of the alloy layer and the first element-based substrate is performed. The first thermal anneal causes the second element in the alloy layer to migrate towards a surface of the alloy layer. A Schottky contact layer is formed on the alloy layer after the first thermal anneal.

Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height

Devices comprising germanium nanosheets are described herein. Methods of forming such germanium nanosheets and devices including such germanium nanosheets are also described.

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Taipei, Taiwan

Hung-Hsiang Cheng