Gyeonggi-do, South Korea

Hun-Hyeoung Lim

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2004-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hun-Hyeoung Lim. Retrieved from https://idiyas.com/inventor/hun-hyeoung-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2004-2006

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Hun-Hyeoung Lim

Introduction

Hun-Hyeoung Lim is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory devices. With a total of 2 patents to his name, Lim's work has had a considerable impact on the industry.

Latest Patents

Hun-Hyeoung Lim's latest patents include a method of forming a gate of a non-volatile memory device. This innovative method involves the formation of a tunnel dielectric layer on a semiconductor device, followed by the creation of a floating gate layer on the tunnel dielectric layer. An intergate dielectric layer, known as the ONO layer, is then formed on the floating gate layer. Subsequently, in-situ doped silicon is deposited on the intergate dielectric layer to create a control gate layer, which is then subjected to annealing. The process ensures that the phase transformation of the control gate silicon layer does not occur during the gate oxidation process, thereby reducing thickness variation of the ONO layer and improving the endurance and bake retention characteristics of the semiconductor device.

Another significant patent by Lim involves methods for manufacturing stacked gates that include oxide/nitride/oxide (ONO) interlayer dielectrics. This method utilizes pre-annealing and/or post-annealing in nitrogen. The semiconductor device produced features a stacked gate with stacked gate sidewalls and an ONO interlayer dielectric. The process begins with pre-annealing the stacked gate in a nitrogen-rich atmosphere, followed by oxidation of the stacked gate sidewalls. Post-annealing is then performed in a second nitrogen atmosphere, enhancing the overall performance of the semiconductor device.

Career Highlights

Hun-Hyeoung Lim is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to be at the forefront of technological advancements in semiconductor devices.

Collaborations

Throughout his career, Lim has collaborated with notable colleagues, including Woo-Sung Lee and Hyeon-Deok Lee. These collaborations have contributed to the successful development of innovative technologies in the semiconductor field.

Conclusion

Hun-Hyeoung Lim's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a significant inventor in the

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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