The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Feb. 06, 2003
Young-Sub You, Gyeonggi-do, KR;
Hun-Hyeoung Lim, Gyeonggi-do, KR;
Sang-Hoon Lee, Seoul, KR;
Woo-Sung Lee, Gyeonggi-do, KR;
Abstract
A semiconductor device including a stacked gate having stacked gate sidewalls and an oxide/nitride/oxide (ONO) interlayer dielectric is manufactured by pre-annealing the stacked gate in a first atmosphere that includes nitrogen. At least a portion of the stacked gate sidewalls of the stacked gate that has been pre-annealed is oxidized. Post-annealing is then performed on the stacked gate including the stacked gate sidewalls that have been oxidized, in a second atmosphere that includes nitrogen.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile