Beijing, China

Huijun Li

This inventor holds 47 USPTO granted patents and 13 published patent applications and 6 EPO patents, primarily in Display Technology. Top assignees: Boe Technology Group Co., Ltd., Chengdu Boe Optoelectronics Technology Co., Ltd., Beijing Boe Multimedia Technology Co., Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huijun Li. Retrieved from https://idiyas.com/inventor/huijun-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 47 

% Patents Active = 91.5

 

Average Co-Inventor Count = 5.9

ph-index = 3

Forward Citations = 29(Granted Patents)


Company Filing History:


Years Active: 2018-2026

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Areas of Expertise:
Display Substrate
Display Device
Flexible Panel
Pixel Circuit
Manufacturing Method
Display Panel
Gamma Adjustment
Signal Lines
Long-Term Stability
Crack Detection
47 patents (USPTO):Explore Patents

Title: Inventor Huijun Li - Revolutionizing Technology in Beijing

Introduction: Huijun Li is a pioneering inventor based in Beijing, China, known for her groundbreaking contributions to the field of technology.

Latest Patents: Huijun Li holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing her innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Huijun Li has worked with top research institutions and technology companies in Beijing, playing a key role in developing cutting-edge solutions that have had a significant impact on various industries.

Collaborations: Throughout her career, Huijun Li has collaborated with leading experts in the field, fostering a culture of innovation and knowledge-sharing that has led to the development of revolutionary technologies.

Conclusion: Huijun Li's passion for innovation and her relentless pursuit of excellence continue to inspire the next generation of inventors and technologists in Beijing and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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