Hui Min Mao

Title: Innovations of Hui Min Mao

Introduction

Hui Min Mao is a notable inventor based in Tainan Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on processes that enhance the functionality and efficiency of MOS transistors.

Latest Patents

One of his latest patents is titled "Process for measuring depth of source and drain." This innovative process involves measuring the depth of a source and drain of a MOS transistor formed on a semiconductor substrate. The method includes measuring resistances of the buried strap at various depths, establishing a correlation curve, obtaining slopes of resistance to depth, and finally determining the depth corresponding to a minimum resistance. Another significant patent is "Method of metal etching post cleaning." This method outlines a procedure for cleaning a substrate with a patterned metal layer and resist layer. It involves oxygen-plasma ashing, ozone-plasma ashing, and cleaning with sulfuric peroxide, ensuring optimal conditions for effective metal etching.

Career Highlights

Hui Min Mao has worked with prominent companies in the technology sector, including Nan Ya Technology Corporation and Nänaya Technology Corporation. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Hui Min Mao has collaborated with talented individuals such as Tzu-Ching Tsai and Yi-Nan Chen. Their combined expertise has contributed to the advancement of their projects and innovations.

Conclusion

Hui Min Mao's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative processes continue to influence the industry and pave the way for future advancements.