The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Jun. 04, 2002
Tzu-Ching Tsai, Taichung Hsien, TW;
Hui Min Mao, Tainan Hsien, TW;
Ying Huan Chuang, Taoyuan Hsien, TW;
Yu-Pi Lee, Taipei Hsien, TW;
Nänaya Technology Corporation, Taoyuan, TW;
Abstract
A method for estimating capacitance of deep trench capacitor in a substrate. After a photoresist layer used to define the region of the lower electrode is formed on an oxide layer doping with a conducting type dopant, the height difference of the photoresist layer between the memory cell array area and the supporting area is measured. The radicand of the height difference is directly proportional to a capacitance of a capacitor to-be-formed in the trenches.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile