Ying Huan Chuang

Title: Innovations of Ying Huan Chuang

Introduction

Ying Huan Chuang is a notable inventor based in Taoyuan Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming buried plates and estimating capacitance in deep trench capacitors. With a total of two patents to his name, Chuang's work has had a considerable impact on the industry.

Latest Patents

Chuang's latest patents include a "Method for forming buried plates" and a "Method for estimating capacitance of deep trench capacitors." The method for forming buried plates involves providing a substrate with a pad stacked layer, a bottle trench, and a protective layer. It details the process of forming a doped hemispherical silicon grain layer and subjecting it to drive-in annealing to create a buried plate within the lower sidewalls of the bottle trench. The second patent focuses on estimating the capacitance of deep trench capacitors by measuring the height difference of a photoresist layer, which is directly proportional to the capacitance of the capacitor to be formed.

Career Highlights

Throughout his career, Ying Huan Chuang has worked with prominent companies in the technology sector, including Nan Ya Technology Corporation and Nänaya Technology Corporation. His experience in these organizations has allowed him to refine his skills and contribute to innovative projects in semiconductor technology.

Collaborations

Chuang has collaborated with several professionals in his field, including Tzu-Ching Tsai and Hui Min Mao. These collaborations have likely enhanced his research and development efforts, leading to successful patent applications.

Conclusion

Ying Huan Chuang's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the industry and inspire future innovations.