Hui-Ling Huang

Title: Hui-Ling Huang: Innovator in MOS Transistor Manufacturing

Introduction

Hui-Ling Huang is a prominent inventor based in Tai-Chung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of MOS transistors. With a total of 4 patents to his name, Huang's work has been instrumental in advancing microelectronics fabrication.

Latest Patents

Huang's latest patents include a method for manufacturing MOS transistors utilizing a hybrid hard mask. This innovative method involves providing a substrate with a dielectric layer and a polysilicon layer, forming a hybrid hard mask, and performing etching processes to create a gate structure and recesses in the substrate. Another notable patent is a profile improvement method for patterning, which addresses the grain phenomenon issue of rough sidewalls in integrated circuit microelectronics. This method utilizes a thermal-compressive material and process to enhance profile quality, achieving improvements in both top and lateral views.

Career Highlights

Hui-Ling Huang is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of semiconductor technology. His expertise in MOS transistor manufacturing has positioned him as a key player in the industry.

Collaborations

Huang has collaborated with several talented individuals, including Benjamin Szu-Min Lin and Anseime Chen, who contribute to the innovative environment at United Microelectronics Corporation.

Conclusion

Hui-Ling Huang's contributions to the field of semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as a leading inventor. His innovative methods for manufacturing MOS transistors and improving patterning profiles are paving the way for advancements in microelectronics.