The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
May. 27, 2003
Hui-ling Huang, Tai-Chung, TW;
Benjamin Szu-min Lin, Hsin-Chu, TW;
Cheng-chung Chen, Tao-Yuan, TW;
George Liu, Tao-Yuan, TW;
Hui-Ling Huang, Tai-Chung, TW;
Benjamin Szu-Min Lin, Hsin-Chu, TW;
Cheng-Chung Chen, Tao-Yuan, TW;
George Liu, Tao-Yuan, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
There is a grain phenomenon issue of rough sidewall for patterning. Thus, imprecise grain profiles would be observed. As the critical dimensions of integrated circuit microelectronics fabrication device have decreased, the effect of grain phenomenon have become more pronounced. A profile improvement method with a thermal-compressive material and a thermal-compressive process is provided to solve the grain phenomenon issue for baseline of 0.09 um generation and beyond. With this material, the profile can be improved no matter in top view or lateral view. Furthermore, there are 0.1 um IDOF improvement and better physical etching performance.