Hsin-Chu, Taiwan

Hui-Chang Yu

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.1

ph-index = 1

Forward Citations = 7(Granted Patents)


Location History:

  • Hsin-chu, TW (2005)
  • Hsinchu County, TW (2023 - 2024)

Company Filing History:


Years Active: 2005-2025

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9 patents (USPTO):

Title: Innovations of Hui-Chang Yu in Semiconductor Technology

Introduction

Hui-Chang Yu is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of eight patents. His work focuses on enhancing the efficiency and reliability of semiconductor devices.

Latest Patents

One of his latest patents is titled "Dam structure on lid to constrain a thermal interface material in a semiconductor device package structure and methods for forming the same." This invention involves a semiconductor device that includes a package substrate, a first semiconductor die, and a package lid. The thermal interface material is strategically located between the semiconductor die and the package lid, with a dam formed on the internal surface of the lid to constrain the material during reflow operations. Another notable patent is "Semiconductor device and manufacturing method thereof," which describes a semiconductor device comprising two semiconductor dies and a package lid that thermally connects to one die while remaining physically separated from the other.

Career Highlights

Hui-Chang Yu works at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative designs and patents have contributed to advancements in semiconductor packaging and thermal management.

Collaborations

He collaborates with talented coworkers, including Shu-Shen Yeh and Po-Yao Lin, who share his commitment to innovation in semiconductor technology.

Conclusion

Hui-Chang Yu's contributions to semiconductor technology through his patents and collaborations highlight his role as a key inventor in the industry. His work continues to influence the development of efficient semiconductor devices.

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