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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Huanlong Liu

USPTO Granted Patents = 37 

 

Average Co-Inventor Count = 5.8

ph-index = 6

Forward Citations = 132(Granted Patents)


Location History:

  • San Jose, CA (US) (2016 - 2022)
  • Sunnyvale, CA (US) (2017 - 2024)

Company Filing History:

goldMedal29 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal8 out of 1,214 
 
Headway Technologies, Incorporated
 patents

Years Active: 2016-2025

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37 patents (USPTO):
1. 12414476 - Method for forming a perpendicular spin torque oscillator (PSTO) including forming a magneto resistive sensor (MR) over a spin torque oscillator (STO) (2025-09-09),
2. 12356865 - Multilayer structure for reducing film roughness in magnetic devices (2025-07-08),
3. 12167701 - Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications (2024-12-10),
4. 12167699 - Magnetic layer for magnetic random access memory (MRAM) by moment enhancement (2024-12-10),
5. 11956971 - Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices (2024-04-09),
6. 11849646 - Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) (2023-12-19),
7. 11696511 - Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions (2023-07-04),
8. 11573270 - Electrical testing apparatus for spintronics devices (2023-02-07),
9. 11569441 - Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy (2023-01-31),
10. 11563170 - Fully compensated synthetic ferromagnet for spintronics applications (2023-01-24),
11. 11417835 - Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) (2022-08-16),
12. 11309489 - Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications (2022-04-19),
13. 11054471 - Electrical testing apparatus for spintronics devices (2021-07-06),
14. 10978124 - Method and circuits for programming STT-MRAM cells for reducing back-hopping (2021-04-13),
15. 10957851 - Magnetic layer for magnetic random access memory (MRAM) by moment enhancement (2021-03-23),

Title: Huanlong Liu: Pioneering Inventor from Sunnyvale

Introduction: Huanlong Liu is a distinguished inventor based in Sunnyvale, California, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Huanlong Liu holds several patents in the areas of artificial intelligence, machine learning, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Huanlong Liu has worked with leading tech companies, research institutions, and universities, playing a pivotal role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Huanlong Liu has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing that has led to numerous breakthrough inventions.

Conclusion: Huanlong Liu's passion for innovation, coupled with his relentless pursuit of excellence, continues to inspire the next generation of inventors and technologists, making him a true pioneer in the world of technology.

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