Kaohsiung, Taiwan

Huang-Siang Lan

This inventor holds 7 USPTO granted patents and 1 published patent application. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Taiwan University. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huang-Siang Lan. Retrieved from https://idiyas.com/inventor/huang-siang-lan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 1

Forward Citations = 10(Granted Patents)


Location History:

  • Kaohsiung, TW (2019 - 2023)
  • Hsinchu, TW (2023)

Company Filing History:


Years Active: 2019-2026

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7 patents (USPTO):Explore Patents

Title: Innovations by Huang-Siang Lan in Semiconductor Technology

Introduction

Huang-Siang Lan is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents that reflect his dedication to innovation and advancement in this crucial industry.

Latest Patents

Lan's latest patents demonstrate his cutting-edge work in semiconductor devices. The first patent is for a "Semiconductor device structure with channel and method for forming the same," which describes a semiconductor device structure that includes a substrate and a first nanostructure positioned over it. This nanostructure operates with a specific channel direction, contributing to enhanced performance and efficiency in semiconductor applications.

The second patent elucidates a "Semiconductor device and method of manufacturing thereof." This invention involves a fin extending along a first direction over a substrate, paired with a gate structure that encompasses the fin. Key components include a gate dielectric layer and insulating sidewalls, all crafted to improve the reliability and functionality of semiconductor devices, particularly through the innovative use of a stressor layer that incorporates GeSn or SiGeSn.

Career Highlights

Huang-Siang Lan's impressive career spans key roles in prominent organizations. He has worked with the Taiwan Semiconductor Manufacturing Company Ltd. and has also contributed to research at National Taiwan University. His experiences at these institutions have allowed him to enhance his expertise in semiconductor technology and drive significant advancements in the field.

Collaborations

Throughout his career, Lan has collaborated with esteemed colleagues including I-Hsieh Wong and Chung-En Tsai. These partnerships have further enriched his work, facilitating a dynamic exchange of ideas and innovation in the realm of semiconductor inventions.

Conclusion

Huang-Siang Lan stands out as a leading inventor in the semiconductor industry. His latest patents reflect a strong commitment to research and development, with promising implications for future technology. As the semiconductor landscape continues to evolve, Lan's contributions are sure to play a pivotal role in shaping its future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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