The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Jun. 24, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
I-Hsieh Wong, Kaohsiung, TW;
Samuel C. Pan, Hsinchu, TW;
Chee-Wee Liu, Taipei, TW;
Huang-Siang Lan, Kaohsiung, TW;
Chung-En Tsai, Zhubei, TW;
Fang-Liang Lu, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A method of manufacturing a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers on a substrate. The first and second semiconductor layers include first end portions on either side of a second portion along a length of the first and second semiconductor layers. The first and second semiconductor layers are formed of different materials. The second portion of the first semiconductor layers is removed to form spaces. A mask layer is formed over the second portion of an uppermost second semiconductor layer above the spaces. The first portions of first and second semiconductor layers are irradiated with radiation from a radiation source to cause material from the first portions of the first and second semiconductor layers to combine with each other.