Huan-Tsung Huang

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2005-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huan-Tsung Huang. Retrieved from https://idiyas.com/inventor/huan-tsung-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17

% Patents Active = 52.9

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 94(Granted Patents)

Location History:

Puli Township, Nantou County, TW (2008)
Jhubei, TW (2011)
Hsinchu County, TW (2012 - 2014)
Hsinchi County, TW (2014)
Hsin-Chu, TW (2005 - 2017)
Changhua, TW (2021 - 2023)

Company Filing History:

17 out of 42,926

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2005-2023

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Areas of Expertise:

Epi Block Structure

High Breakdown Voltage

Fin-Type Resistor

Dielectric-Sealed Region

Metal Gate

MOSFET Engineering

Transistor Performance

High-k Metal Gate

Silicided Metal Gate

Mechanical Stress Optimization

Disposable Spacer

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11621351 - Epi block structure in semiconductor product providing high breakdown voltage (2023-04-04),

2. 10998443 - Epi block structure in semiconductor product providing high breakdown voltage (2021-05-04),

3. 9812444 - Fin-type resistor (2017-11-07),

4. 9691758 - Fin-type resistor (2017-06-27),

5. 9443925 - Semiconductor structure with dielectric-sealed doped region (2016-09-13),

6. 9136329 - Semiconductor structure with dielectric-sealed doped region (2015-09-15),

7. 8754487 - Semiconductor device with metal gate (2014-06-17),

8. 8679926 - Local charge and work function engineering on MOSFET (2014-03-25),

9. 8415749 - Semiconductor structure with dielectric-sealed doped region (2013-04-09),

10. 8357581 - Transistor performance improving method with metal gate (2013-01-22),

11. 8324090 - Method to improve dielectric quality in high-k metal gate technology (2012-12-04),

12. 8030718 - Local charge and work function engineering on MOSFET (2011-10-04),

13. 8012817 - Transistor performance improving method with metal gate (2011-09-06),

14. 7768072 - Silicided metal gate for multi-threshold voltage configuration (2010-08-03),

15. 7759210 - Method for forming a MOS device with reduced transient enhanced diffusion (2010-07-20),

Title: Inventor Huan-Tsung Huang: Pioneering Innovations in Hsin-Chu

Introduction: Huan-Tsung Huang is a distinguished inventor known for his groundbreaking contributions to the field of technology, particularly in Hsin-Chu, Taiwan. His inventive spirit and dedication to pushing the boundaries of what is possible have earned him a reputation as a visionary in the industry.

Latest Patents: Huan-Tsung Huang's latest patents showcase his commitment to developing cutting-edge solutions in various technological domains. His recent inventions have focused on enhancing efficiency, improving user experience, and advancing the capabilities of electronic devices.

Career Highlights: Throughout his illustrious career, Huan-Tsung Huang has achieved numerous milestones and accolades. From his early days as a budding inventor to his current status as a respected figure in the tech community, he has consistently demonstrated a passion for innovation and a keen eye for identifying emerging trends.

Collaborations: Huan-Tsung Huang has collaborated with leading tech companies, research institutions, and universities to bring his ideas to life. His partnerships have been instrumental in driving forward the development of new technologies and fostering a culture of innovation within the industry.

Conclusion: In conclusion, Huan-Tsung Huang's innovative spirit, coupled with his relentless pursuit of excellence, has cemented his legacy as a trailblazer in the world of technology. His contributions have not only transformed the way we interact with electronic devices but have also inspired a new generation of invent

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]