The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Sep. 14, 2011
Huan-tsung Huang, Hsinchi County, TW;
Shyh-horng Yang, Hsinchu, TW;
Yuri Masuoka, Hsinchu County, TW;
Ken-ichi Goto, Hsin-Chu, TW;
Huan-Tsung Huang, Hsinchi County, TW;
Shyh-Horng Yang, Hsinchu, TW;
Yuri Masuoka, Hsinchu County, TW;
Ken-Ichi Goto, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having a source region and a drain region, defining a first dimension from the source to drain; and a gate stack disposed on the semiconductor substrate and partially interposed between the source region and the drain region. The gate stack includes a high k dielectric layer disposed on the semiconductor substrate; a first metal feature disposed on the high k dielectric layer, the first metal gate feature having a first work function and defining a second dimension parallel with the first dimension; and a second metal feature having a second work function different from the first work function and defining a third dimension parallel with the first dimension, the third dimension being less than the second dimension.