Hsinchu, Taiwan

Hu H Chao

This inventor holds 4 USPTO granted patents. Top assignees: Industrial Technology Research Institute, Etron Technology, Inc.. Active years: 1993-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hu H Chao. Retrieved from https://idiyas.com/inventor/hu-h-chao-e5760dvj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 3

Forward Citations = 43(Granted Patents)


Location History:

  • Hsinchu, TW (1993 - 1995)
  • Taipei, TW (2001)

Company Filing History:


Years Active: 1993-2001

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4 patents (USPTO):Explore Patents

Title: Hu H Chao: Innovator in Semiconductor Technology

Introduction

Hu H Chao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative transistor designs and fabrication methods that enhance the performance and reliability of electronic devices.

Latest Patents

One of Hu H Chao's latest patents is the "Buried Channel Quasi-Unipolar Transistor." This invention features a buried channel lateral quasi-unipolar transistor designed to minimize flicker or 1/f noise. The structure includes a bulk region that serves as the base, with a drain region implanted to form a drain/collector. A source region is strategically placed at a distance from the drain region, and a channel layer is implanted to create a low resistivity conduction path. Additionally, a gate oxide is positioned above the channel layer, with a gate electrode made of conductive material to control the transistor's operation. This innovative design may also include an overlayer to form the buried channel layer, enhancing the transistor's performance.

Another notable patent is the "Fabrication Method to Produce Pit-Free Polysilicon Buffer Local." This method involves creating a silicon oxide isolation region on a silicon wafer, utilizing a thin layer of silicon oxide, impurity-doped polysilicon, and silicon nitride. The process includes forming an oxidation mask and subjecting the structure to thermal oxidation to create the isolation region without damaging the monocrystalline substrate.

Career Highlights

Hu H Chao has worked with several esteemed organizations, including the Industrial Technology Research Institute and Etron Technology, Inc. His experience in these companies has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Hu H Chao has collaborated with notable colleagues such as Hsiao-Chin Tuan and Hsiang-Ming J Chou. These partnerships have contributed to the advancement of technology in their respective fields.

Conclusion

Hu H Chao is a distinguished inventor whose work in semiconductor technology has led to several impactful patents. His innovative designs and methods continue to influence the industry, showcasing his commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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