Hsun-Ming Chang

Title: Hsun-Ming Chang: Innovator in Phosphorene Technology

Introduction

Hsun-Ming Chang is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of materials science, particularly in the development of devices utilizing doped phosphorene. With a total of 2 patents, his work is paving the way for advancements in electronic materials.

Latest Patents

Chang's latest patents include a device with doped phosphorene and a method for doping phosphorene. The device comprises a phosphide-containing structure, a dopant source layer, and a conductive contact. The phosphide-containing structure features a first chemical element in a compound with phosphorus. The dopant source layer is positioned over the phosphide-containing structure and contains a second chemical element identical to the first. The conductive contact is situated above the dopant source layer. Additionally, the method involves providing a black phosphorus (BP) layer over a substrate, forming a dopant source layer over the BP layer, and annealing the dopant source layer to drive a dopant into the BP layer, culminating in the formation of a conductive contact.

Career Highlights

Hsun-Ming Chang has worked with notable organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and materials science.

Collaborations

Chang has collaborated with esteemed colleagues, including Yu-Ming Lin and Chao-Hsin Wu. These partnerships have contributed to the innovative research and development of new technologies in his field.

Conclusion

Hsun-Ming Chang's contributions to the field of phosphorene technology highlight his role as a leading inventor. His patents and collaborations reflect a commitment to advancing materials science and electronic devices.