The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Apr. 23, 2018
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Yu-Ming Lin, Hsinchu, TW;
Chao-Hsin Wu, Taipei, TW;
Hsun-Ming Chang, Kaohsiung, TW;
Samuel C. Pan, Hsinchu, TW;
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 21/385 (2006.01); H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01); H01L 29/45 (2006.01); H01L 29/267 (2006.01); H01L 21/4757 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/385 (2013.01); H01L 29/0649 (2013.01); H01L 29/1033 (2013.01); H01L 29/267 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/786 (2013.01); H01L 29/78696 (2013.01); H01L 29/861 (2013.01); H01L 21/47573 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01);
Abstract
A method includes providing a black phosphorus (BP) layer over a substrate, forming a dopant source layer over the BP layer, annealing the dopant source layer to drive a dopant from the dopant source layer into the BP layer, and forming a conductive contact over the dopant source layer.