The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
May. 15, 2020
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Yu-Ming Lin, Hsinchu, TW;
Chao-Hsin Wu, Taipei, TW;
Hsun-Ming Chang, Kaohsiung, TW;
Samuel C. Pan, Hsinchu, TW;
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 21/385 (2006.01); H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01); H01L 29/45 (2006.01); H01L 29/267 (2006.01); H01L 21/4757 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/385 (2013.01); H01L 29/0649 (2013.01); H01L 29/1033 (2013.01); H01L 29/267 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/786 (2013.01); H01L 29/78696 (2013.01); H01L 29/861 (2013.01); H01L 21/47573 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01);
Abstract
A device includes a phosphide-containing structure, a dopant source layer and a conductive contact. The phosphide-containing structure has a first chemical element in a compound with phosphorus. The dopant source layer is over the phosphide-containing structure and has a second chemical element the same as the first chemical element. The conductive contact is over the dopant source layer.