Hsuan-An Chen

Title: Hsuan-An Chen: Innovator in Semiconductor Technology

Introduction

Hsuan-An Chen is a prominent inventor based in Chiayi, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on the development of advanced semiconductor devices that utilize two-dimensional materials.

Latest Patents

One of his latest patents involves forming semiconductor structures with two-dimensional materials. This patent describes semiconductor devices, such as transistors, that include a substrate and a semiconductor region featuring a monolayer material over the substrate. Additionally, a terminal structure is included, which comprises a different monolayer material grown directly over the semiconductor region. Another notable patent addresses source/drain contact with 2-D material. This semiconductor device consists of a substrate, a semiconductor 2-D material layer, a conductive 2-D material layer, a gate dielectric layer, and a gate electrode. The conductive 2-D material layer extends along a source/drain region of the semiconductor 2-D material layer, incorporating a group-IV element.

Career Highlights

Hsuan-An Chen has worked with leading organizations in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to advance his research and development in semiconductor technologies.

Collaborations

Throughout his career, Hsuan-An Chen has collaborated with notable colleagues, including Shih-Yen Lin and Si-Chen Lee. These collaborations have contributed to the innovative advancements in his field.

Conclusion

Hsuan-An Chen's work in semiconductor technology exemplifies the importance of innovation in modern electronics. His patents and collaborations highlight his commitment to advancing the capabilities of semiconductor devices.