The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Dec. 12, 2019
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02417 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02568 (2013.01); H01L 21/02631 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01);
Abstract
The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoSand/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.