Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Hsuan-An Chen

Shih-Yen Lin

Si-Chen Lee

Kuan-Chao Chen

Lun-Ming Lee

The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoSand/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Forming semiconductor structures with two-dimensional materials

A semiconductor device includes a substrate, semiconductor 2-D material layer, a conductive 2-D material layer, a gate dielectric layer, and a gate electrode. The semiconductor 2-D material layer is over the substrate. The conductive 2-D material layer extends along a source/drain region of the semiconductor 2-D material layer, in which the conductive 2-D material layer comprises a group-IV element. The gate dielectric layer extends along a channel region of the semiconductor 2-D material layer. The gate electrode is over the gate dielectric layer.

Source/drain contact with 2-D material

The current disclosure describes semiconductor devices, e.g., transistors, including a substrate, a semiconductor region including, at the surface, monolayer MoSand/or other monolayer material over the substrate, and a terminal structure over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Growing community of inventors

Chiayi, Taiwan

Hsuan-An Chen