Tainan, Taiwan

Hsu-Yu Huang


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2018-2022

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3 patents (USPTO):Explore Patents

Title: Hsu-Yu Huang: Innovator in Semiconductor Technology

Introduction

Hsu-Yu Huang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for forming semiconductor devices, which are crucial for modern electronics.

Latest Patents

Hsu-Yu Huang's latest patents include a method for forming a semiconductor device with a gate stack. This method involves creating a gate stack over a semiconductor substrate and forming a spacer element on the sidewall of the gate stack. Additionally, it includes the formation of a dielectric layer that surrounds both the gate stack and the spacer element, followed by the replacement of the gate stack with a metal gate stack. Another notable patent is for a semiconductor device that features a gate stack and a spacer element, designed with specific dimensions to enhance performance. This device also includes a dielectric layer and a conductive contact that connects to a conductive feature over the semiconductor substrate.

Career Highlights

Hsu-Yu Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approaches have positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Hsu-Yu Huang has collaborated with notable colleagues such as Hua-Li Hung and Chih-Lun Lu. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.

Conclusion

Hsu-Yu Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future advancements in semiconductor devices.

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