The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Jun. 03, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hua-Li Hung, Hsinchu, TW;
Chih-Lun Lu, New Taipei, TW;
Hsu-Yu Huang, Tainan, TW;
Tsung-Fan Yin, Kaohsiung, TW;
Ying-Ting Hsia, Kaohsiung, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Li-Te Hsu, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming semiconductor device structure is provided. The method includes forming a gate stack over a semiconductor substrate and forming a spacer element over a sidewall of the gate stack. The method also includes forming a dielectric layer over the semiconductor substrate to surround the gate stack and the spacer element and replacing the gate stack with a metal gate stack. The method further includes forming a protection element over the metal gate stack and forming a conductive contact partially surrounded by the dielectric layer. A portion of the conductive contact is formed directly above a portion of the protection element.