The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Sep. 10, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hua-Li Hung, Hsinchu, TW;
Chih-Lun Lu, New Taipei, TW;
Hsu-Yu Huang, Tainan, TW;
Tsung-Fan Yin, Kaohsiung, TW;
Ying-Ting Hsia, Kaohsiung, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Li-Te Hsu, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a gate stack over a semiconductor substrate and a spacer element over a sidewall of the gate stack. The spacer element has a lower portion and an upper portion, the lower portion has a substantially uniform width. The upper portion becomes wider along a direction from a top of the spacer element towards the lower portion, and a bottom of the upper portion is higher than a top of the gate stack. The semiconductor device also includes a dielectric layer surrounding the gate stack and the spacer element. The semiconductor device further includes a conductive contact penetrating through the dielectric layer and electrically connected to a conductive feature over the semiconductor substrate.