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For the Inventor, By the Inventor

Carmel, NY, United States of America

Hsing-Jen C Wann

USPTO Granted Patents = 15

Average Co-Inventor Count = 2.5

ph-index = 7

Forward Citations = 323(Granted Patents)


Location History:

  • Yorktown Heights, NY (US) (1999 - 2000)
  • Briarcliff Manor, NY (US) (2000 - 2003)
  • Carmel, NY (US) (2005 - 2006)
  • Fishkill, NY (US) (2005 - 2011)

Company Filing History:

goldMedal14 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal1 out of 832,843 
Other
 patents

Years Active: 1999-2011

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15 patents (USPTO):Explore Patents
1. 7923786 - Selective silicon-on-insulator isolation structure and method (2011-04-12),
2. 7326983 - Selective silicon-on-insulator isolation structure and method (2008-02-05),
3. 7056794 - FET gate structure with metal gate electrode and silicide contact (2006-06-06),
4. 6975133 - Logic circuits having linear and cellular gate transistors (2005-12-13),
5. 6974736 - Method of forming FET silicide gate structures incorporating inner spacers (2005-12-13),
6. 6936522 - Selective silicon-on-insulator isolation structure and method (2005-08-30),
7. 6653686 - Structure and method of controlling short-channel effect of very short channel MOSFET (2003-11-25),
8. 6429091 - Patterned buried insulator (2002-08-06),
9. 6297127 - Self-aligned deep trench isolation to shallow trench isolation (2001-10-02),
10. 6268640 - Forming steep lateral doping distribution at source/drain junctions (2001-07-31),
11. 6057724 - Method and apparatus for synchronized clock distribution (2000-05-02),
12. 6025242 - Fabrication of semiconductor device having shallow junctions including (2000-02-15),
13. 6022771 - Fabrication of semiconductor device having shallow junctions and (2000-02-08),
14. 5998273 - Fabrication of semiconductor device having shallow junctions (1999-12-07),
15. 5998248 - Fabrication of semiconductor device having shallow junctions with (1999-12-07),

Title: Hsing-Jen C Wann: Innovator in Semiconductor Technology

Introduction

Hsing-Jen C Wann is a notable inventor based in Carmel, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work has advanced the methods and structures used in semiconductor fabrication.

Latest Patents

One of Hsing-Jen C Wann's latest patents is focused on a selective silicon-on-insulator isolation structure and method. This invention outlines a method for forming an isolation structure that includes several steps: providing a semiconductor substrate, forming a buried N-doped region in the substrate, creating a vertical trench that extends into the N-doped region, removing the N-doped region to form a lateral trench that communicates with and extends perpendicular to the vertical trench, and finally, at least partially filling both the lateral and vertical trenches with insulating materials. This innovative approach enhances the efficiency and effectiveness of semiconductor devices.

Career Highlights

Hsing-Jen C Wann has worked with prestigious organizations, including the International Business Machines Corporation (IBM). His experience in such a renowned company has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor industry.

Collaborations

Throughout his career, Hsing-Jen C Wann has collaborated with talented individuals, including An L Steegen and Ying Di Zhang. These collaborations have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Hsing-Jen C Wann's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative methods continue to influence the industry and pave the way for future advancements.

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