IDiyas

For the Inventor, By the Inventor

Carmel, NY, United States of America

Hsing-Jen C Wann

USPTO Granted Patents = 15

Average Co-Inventor Count = 2.5

ph-index = 7

Forward Citations = 323(Granted Patents)


Location History:

  • Yorktown Heights, NY (US) (1999 - 2000)
  • Briarcliff Manor, NY (US) (2000 - 2003)
  • Carmel, NY (US) (2005 - 2006)
  • Fishkill, NY (US) (2005 - 2011)

Company Filing History:

goldMedal14 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 1999-2011

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):
1. 7923786 - Selective silicon-on-insulator isolation structure and method (2011-04-12),
2. 7326983 - Selective silicon-on-insulator isolation structure and method (2008-02-05),
3. 7056794 - FET gate structure with metal gate electrode and silicide contact (2006-06-06),
4. 6975133 - Logic circuits having linear and cellular gate transistors (2005-12-13),
5. 6974736 - Method of forming FET silicide gate structures incorporating inner spacers (2005-12-13),
6. 6936522 - Selective silicon-on-insulator isolation structure and method (2005-08-30),
7. 6653686 - Structure and method of controlling short-channel effect of very short channel MOSFET (2003-11-25),
8. 6429091 - Patterned buried insulator (2002-08-06),
9. 6297127 - Self-aligned deep trench isolation to shallow trench isolation (2001-10-02),
10. 6268640 - Forming steep lateral doping distribution at source/drain junctions (2001-07-31),
11. 6057724 - Method and apparatus for synchronized clock distribution (2000-05-02),
12. 6025242 - Fabrication of semiconductor device having shallow junctions including (2000-02-15),
13. 6022771 - Fabrication of semiconductor device having shallow junctions and (2000-02-08),
14. 5998273 - Fabrication of semiconductor device having shallow junctions (1999-12-07),
15. 5998248 - Fabrication of semiconductor device having shallow junctions with (1999-12-07),
This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…