International Business Machines Corporation

Other

Hsing-Jen C Wann

An L Steegen

Ying Di Zhang

William H Ma

Robert C Wong

Maheswaran Surendra

Franz X Zach

Bomy A Chen

Victor Ku

Oleg Gluschenkov

Keith Kwong Hon Wong

Herbert Lei Ho

Robert Hannon

Nivo Rovedo

Yuan Taur

Heemyong Park

Shih-Fen Huang

Sundar Kumar Iyer

Liang-Kai Han

Jay G Harrington

Alexander W Hirsch

Victor Wing Chung Chan

A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

Selective silicon-on-insulator isolation structure and method

A method is provided for fabricating a single-metal or dual metal replacement gate structure for a semiconductor device; the structure includes a silicide contact to the gate region. A dummy gate structure and sacrificial gate dielectric are removed to expose a portion of the substrate; a gate dielectric is formed thereon. A metal layer is formed overlying the gate dielectric and the dielectric material. This metal layer may conveniently be a blanket metal layer covering a device wafer. A silicon layer is then formed overlying the metal layer; this layer may also be a blanket wafer. A planarization or etchback process is then performed, so that the top surface of the dielectric material is exposed while other portions of the metal layer and the silicon layer remain in the gate region and have surfaces coplanar with the top surface of the dielectric material. A silicide contact is then formed which is in contact with the metal layer in the gate region.

FET gate structure with metal gate electrode and silicide contact

A logic circuit is provided with a first inverter having a plurality of linear gate transistors driving a first capacitive load and a second inverter having a plurality of cellular gate transistors driving a second capacitive load. The first inverter is serially connected to the second inverter. The second capacitive load is larger than the first capacitive load.

Logic circuits having linear and cellular gate transistors

A method is provided for fabricating a gate structure for a semiconductor device in which the gate structure has an inner spacer. A replacement-gate process is used in which material is removed in a gate region to expose a portion of the substrate; a gate dielectric is formed on the exposed portion of the substrate; and an inner spacer layer is formed overlying the gate dielectric and the dielectric material. A silicon layer is then formed which overlies the inner spacer layer. The structure is then planarized so that portions of the silicon layer and inner spacer layer remain in the gate region. A silicide gate structure is then formed from the silicon; the silicide gate structure is separated from dielectric material surrounding the gate by the inner spacer layer. The semiconductor device may include a first gate region and a second gate region with an interface therebetween, with the inner spacer layer covering the interface. When the device has two gate regions, the process may be used in both gate regions, so as to produce separate silicide structures, with an inner spacer separating the two structures.

Method of forming FET silicide gate structures incorporating inner spacers

A semiconductor device comprising a gate having an approximately 0.05 &mgr;m channel length, an oxide layer below the gate, a self-aligned compensation implant below the oxide layer, a halo implant surrounding the self-aligned compensation implant below the oxide layer; and gate and drain regions on opposite sides of the halo implant and below the oxide layer.

Structure and method of controlling short-channel effect of very short channel MOSFET

A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

Patterned buried insulator

Shallow trench isolation is combined with optional deep trenches that are self-aligned with the shallow trenches, at the corners of the shallow trenches, and have a deep trench width that is controlled by the thickness of a temporary sidewall deposited in the interior of the shallow trench and is limited by the sidewall deposition thickness of the deep trench fill.

Self-aligned deep trench isolation to shallow trench isolation

A semiconductor device is fabricated by implanting into a semiconductor substrate non-doping ions at a tilt angle of at least about 10&deg; to laterally extend preamorphization of the substrate portion and then implanting into the substrate dopants for providing source/drain extensions or halo doping or both.

Forming steep lateral doping distribution at source/drain junctions

A method and apparatus are described which eliminate the clock skew problems associated with routing clock signals throughout a circuit. Particularly well suited for Very Large Scale Integration ('VLSI') chips, the method and apparatus provide a resonator which is distributed across the circuit. This allows the clock to be accessed at a variety of locations without any propagation delay between the access points. The method for distributing a single, distributed clock signal to a plurality of clock connection points in a circuit comprises two steps. The first step is to generate the clock signal, such that the clock signal is available at a plurality of clock source points without propagation delay. The second step is to couple the plurality of clock source points to the plurality of clock connection points in the circuit.

Method and apparatus for synchronized clock distribution

A semiconductor device having shallow junctions is provided by providing a semiconductor substrate having source and drain regions and polysilicon gate regions; depositing selective silicon on the source and drain regions; providing dopant into the source and drain regions forming shallow junctions; forming first insulating spacers on sidewalls of the gate regions; forming second insulating sidewall spacers on the first insulating spacers; and siliciding the top surfaces of the source and drain regions.

Fabrication of semiconductor device having shallow junctions including

Fabrication of semiconductor device having shallow junctions and

A semiconductor device having shallow junctions is provided by providing a semiconductor substrate having source and drain regions and polysilicon gate regions; depositing selective silicon on the source and drain regions and on the polysilicon gate regions; providing dopant into the source and drain regions forming shallow junctions; forming first insulating spacers on sidewalls of the gate regions; forming second insulating sidewall spacers on the first insulating spacers; implanting dopants into the source and drain regions for providing deep junctions and into the polysilicon gate regions; and siliciding the top surfaces of the source and drain regions and polysilicon gate regions.

Fabrication of semiconductor device having shallow junctions

A semiconductor device having shallow junctions is provided by providing a semiconductor substrate having source and drain regions and polysilicon gate regions; depositing selective silicon on the source and drain regions; providing dopant into the source and drain regions forming shallow junctions; forming first insulating spacers on sidewalls of the gate regions; forming second insulating sidewall spacers on the first insulating spacers; and siliciding the top surfaces of the source and drain regions and polysilicon gate regions.

Growing community of inventors

Carmel, NY, United States of America

Hsing-Jen C Wann