The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Mar. 17, 2005
An L. Steegen, Stamford, CT (US);
Maheswaran Surendra, Croton-on-Hudson, NY (US);
Hsing-jen Wann, Fishkill, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
Franz Zach, Wappingers Falls, NY (US);
Robert Wong, Poughkeepsie, NY (US);
An L. Steegen, Stamford, CT (US);
Maheswaran Surendra, Croton-on-Hudson, NY (US);
Hsing-Jen Wann, Fishkill, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
Franz Zach, Wappingers Falls, NY (US);
Robert Wong, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.