Hsien-Feng Liao

Title: Hsien-Feng Liao: Innovator in Electrostatic Discharge Protection

Introduction

Hsien-Feng Liao is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of electrostatic discharge (ESD) protection circuits. With a total of seven patents to his name, Liao's work is recognized for its innovative approaches to enhancing electronic device safety.

Latest Patents

Liao's latest patents include advanced ESD protection circuits. One of his notable inventions features an ESD protection circuit that is coupled to a first pad. This circuit includes an ESD detection circuit, a P-type transistor, an N-type transistor, and a discharge circuit. The ESD detection circuit determines whether an ESD event occurs on the first pad, generating a detection signal at a first node. The P-type transistor is designed with a source coupled to the first pad, a drain coupled to a second node, and a gate connected to the first node. The N-type transistor has a drain coupled to the second node, a source connected to ground, and a gate linked to a second pad. The discharge circuit is positioned between the first pad and ground, controlled by a driving signal at the second node. When in operation mode, the first pad receives a first voltage, while the second pad receives a second voltage.

Another of Liao's patents describes an ESD protection circuit that includes a buffer circuit, a driving circuit, and a power-clamping circuit. The buffer circuit consists of first and second transistors with a first conductivity type, arranged in a cascade configuration between a first node and a first power supply node. A bonding pad is connected to the first node. The driving circuit determines the state of at least one of the first and second transistors based on a control voltage. This circuit includes a third transistor with a second conductivity type, which is coupled between a second power supply node and the gate of the first transistor, controlled by a control signal. The power-clamping circuit connects the bonding pad to the gate of the third transistor at a second node, with the control voltage generated at the second node based on the voltage at the bonding pad.

Career Highlights

Hsien-Feng Liao is currently employed at Vanguard International Semiconductor Corporation, where he continues to innovate in the field of semiconductor technology. His work has significantly impacted the design and functionality of electronic devices, particularly