The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Apr. 02, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
An electrostatic discharge protection device includes a first well region, a second well region, a first doped region, and a first heavily doped region. The first well region and the second well region are disposed in a semiconductor substrate. The first doped region is disposed in the first well region and the second well region. The first heavily doped region is disposed in the first doped region in the first well region. The first well region and the first doped region have a first conductivity type, and the second well region and the first heavily doped region have a second conductivity type that is the opposite of the first conductivity type.