Hsiao Yu Chia

Title: Hsiao Yu Chia: Innovator in Oxide Semiconductor Technology

Introduction

Hsiao Yu Chia is a prominent inventor based in Singapore, known for his contributions to the field of oxide semiconductor technology. With a total of 2 patents, he has made significant strides in the manufacturing methods of semiconductor devices.

Latest Patents

His latest patents include a "Manufacturing method of oxide semiconductor device" and "Oxide semiconductor transistor and method of manufacturing the same." The first patent outlines a method that involves forming a first oxide semiconductor layer on a substrate, followed by the creation of a gate insulation layer. A crucial step in this process is a first flattening procedure that reduces the roughness of the top surface of the oxide semiconductor layer, enhancing the overall quality of the device. The second patent details a method for manufacturing an oxide semiconductor transistor, which includes providing a transistor on the substrate's front side, attaching a wafer, and forming a contact hole that extends to the oxide semiconductor layer, ultimately filling it with metal material to create a back gate.

Career Highlights

Hsiao Yu Chia is currently employed at United Microelectronics Corporation, where he continues to innovate and develop new technologies in semiconductor manufacturing. His work has positioned him as a key player in the industry, contributing to advancements that are critical for modern electronics.

Collaborations

He collaborates with notable colleagues such as Xiang Li and Shao-Hui Wu, further enhancing the innovative environment at United Microelectronics Corporation.

Conclusion

Hsiao Yu Chia's work in oxide semiconductor technology exemplifies the importance of innovation in the electronics industry. His patents reflect a commitment to advancing manufacturing methods that will shape the future of semiconductor devices.