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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10147614 B1

PDFFull Text
Date of Patent:
Dec. 04, 2018

Filed:

Jan. 08, 2018

Oxide semiconductor transistor and method of manufacturing the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Xiang Li, Singapore, SG;

Shao-Hui Wu, Singapore, SG;

Hsiao Yu Chia, Singapore, SG;

Yu-Cheng Tung, Kaohsiung, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Mohsen Ahmadi

Int. Cl.
CPC ...
H01L 21/441 (2006.01); H01L 21/304 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/78 (2006.01); H01L 23/00 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/441 (2013.01); H01L 21/304 (2013.01); H01L 21/76877 (2013.01); H01L 24/83 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7831 (2013.01); H01L 21/76897 (2013.01); H01L 29/7869 (2013.01); H01L 29/78666 (2013.01); H01L 29/78675 (2013.01);
Abstract

A method of manufacturing an oxide semiconductor transistor is provided in the present invention, which includes the step of providing an oxide semiconductor transistor on the front side of a substrate, attaching a wafer on the front side of the substrate, forming a contact hole extending from the back side of the substrate to the oxide semiconductor layer of the oxide semiconductor transistor, and filling the contact hole with metal material to form a back gate of the oxide semiconductor transistor.

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Li, Xiang. (2018). Oxide semiconductor transistor and method of manufacturing the same (U.S. Patent No. 10147614). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10147614

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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