Hsi Chung Chen

Title: Hsi Chung Chen: Innovator in Semiconductor Technology

Introduction

Hsi Chung Chen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing the performance and efficiency of transistors and semiconductor structures.

Latest Patents

One of Hsi Chung Chen's latest patents is titled "Extended side contacts for transistors and methods forming same." This patent describes a method for forming a source/drain region for a transistor, which includes creating a first inter-layer dielectric over the source/drain region and forming a lower source/drain contact plug that extends into this dielectric. The method also involves depositing an etch stop layer and a second inter-layer dielectric, followed by an etching process to create an opening for an upper source/drain contact plug.

Another notable patent is "Semiconductor structure and method for manufacturing thereof." This patent outlines a semiconductor structure that includes a substrate, conductive regions, insulation layers, and a gate structure. It emphasizes the importance of maintaining a precise proximity distance between the gate contact and the conductive region contact, which is crucial for the performance of the semiconductor device.

Career Highlights

Hsi Chung Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in advancing semiconductor technology.

Collaborations

Hsi Chung Chen has collaborated with notable colleagues, including Chih-Hsuan Lin and Chih-Teng Liao. Their combined expertise contributes to the ongoing advancements in semiconductor research and development.

Conclusion

Hsi Chung Chen's contributions to semiconductor technology through his patents and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as an influential inventor in the field. His innovative methods and structures continue to shape the future of semiconductor devices.