The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Bo-Ting Liao, Hsinchu, TW;
Yung-Chang Jen, Hsinchu, TW;
Tsung-Yi Tseng, Hsinchu, TW;
Shao Yong Chen, Hsinchu, TW;
Hsi Chung Chen, Hsinchu, TW;
Chih-Teng Liao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming an inner chamber in a process chamber of a plasma processing apparatus, the inner chamber having smaller volume than the process chamber. At least one gas is introduced into the inner chamber, and flow of the at least one gas into the inner chamber is measured. The flow of the at least one gas is adjusted to a desired rate, and a wafer is processed by the at least one gas at the desired rate while the inner chamber is not formed.