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For the Inventor, By the Inventor

Los Angeles, CA, United States of America

Hochul Lee

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This inventor holds 24 USPTO granted patents and 4 published patent applications and 2 EPO patents, primarily in Memory Technology. Top assignees: Qualcomm Incorporated, Inston, Inc., Qualcomm Incorproated. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hochul Lee. Retrieved from https://idiyas.com/inventor/hochul-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 24 

% Patents Active = 91.7

 

Average Co-Inventor Count = 2.8

ph-index = 4

Forward Citations = 75(Granted Patents)


Company Filing History:

goldMedal16 out of 45,060 
 
Qualcomm Incorporated
 patents
silverMedal6 out of 9 
 
Inston, Inc.
 patents
bronzeMedal1 out of 81 
 
Qualcomm Incorproated
 patents
4. 1 out of 16,048 
 
University of California
 patents

Years Active: 2017-2026

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Areas of Expertise:
Memory Device
Double Redundancy
Parallel Write
Sense Amplifier
One-Time Programmable
Magnetoelectric RAM
Data Redundancy
Write Termination
Spin Transfer Torque
Pulse Shaping
Sensing Circuit
High-Speed MRAM
24 patents (USPTO):Explore Patents
1. 12763114 - Circuit with a low-power charge-sharing light-sleep mode (2026-10-13),
2. 12665020 - Memory with double redundancy (2026-06-23),
3. 12451171 - High-speed and area-efficient parallel-write-and-read memory (2025-10-21),
4. 12094528 - Memory with double redundancy (2024-09-17),
5. 11894050 - Memory with a sense amplifier isolation scheme for enhancing memory read bandwidth (2024-02-06),
6. 11854609 - Memory with reduced capacitance at a sense amplifier (2023-12-26),
7. 11640835 - Memory device with built-in flexible double redundancy (2023-05-02),
8. 11568904 - Memory with positively boosted write multiplexer (2023-01-31),
9. 11250924 - One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methods (2022-02-15),
10. 11250895 - Systems and methods for driving wordlines using set-reset latches (2022-02-15),
11. 11177010 - Bitcell for data redundancy (2021-11-16),
12. 11164610 - Memory device with built-in flexible double redundancy (2021-11-02),
13. 11152038 - Testing one-time programmable (OTP) memory with data input capture through sense amplifier circuit (2021-10-19),
14. 11114176 - Systems and methods to provide write termination for one time programmable memory cells (2021-09-07),
15. 10861527 - Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory (2020-12-08),

Title: Hochul Lee: Innovator in Memory Technology

Introduction

Hochul Lee is a prominent inventor based in Los Angeles, CA, recognized for his significant contributions to memory technology. With a remarkable portfolio of 21 patents, Lee has demonstrated his expertise and dedication to advancing innovations in the field.

Latest Patents

Among his latest patents, Hochul Lee has developed a “Memory with double redundancy.” This invention features a memory structure equipped with multiple column groups and two redundant column groups. The architecture is designed to handle situations where there are defective columns, allowing the memory to effectively categorize into no-shift, one-shift, and two-shift regions. This sophisticated design incorporates a series of input/output circuits that facilitate data input during write operations and data output during read operations, using a switch matrix for seamless operation.

Another notable patent is the “Memory with a sense amplifier isolation scheme for enhancing memory read bandwidth.” In this invention, Lee introduces a self-timed memory circuit that regulates the isolation of a sense amplifier until a specific voltage difference is achieved. This enhancement in memory functionality improves the efficiency of read operations, showcasing Lee’s innovative thinking.

Career Highlights

Hochul Lee has made a significant impact in the technology sector through his work at Qualcomm Incorporated and Inston, Inc. His tenure at these companies has allowed him to collaborate on groundbreaking memory solutions that push the boundaries of current technology.

Collaborations

Throughout his career, Hochul Lee has worked alongside talented individuals such as Anil Chowdary Kota and Albert Lee. These collaborations have not only fostered a stimulating environment for innovation but have also contributed to the development of resilient memory technologies.

Conclusion

Hochul Lee stands out as a visionary inventor in the realm of memory technology. Through his extensive patent portfolio and collaborations within esteemed companies, Lee’s work continues to influence the future of memory systems, making significant strides in efficiency and reliability. His innovations are paving the way for advancements that will shape the computing landscape for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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