The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Sep. 03, 2024
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Hochul Lee, Los Angeles, CA (US);

Anil Chowdary Kota, San Diego, CA (US);

Chulmin Jung, San Diego, CA (US);

Assignee:

QUALCOMM Incorproated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/412 (2013.01);
Abstract

A bit line charge sharing precharge circuit is provided that precharges a bit line pair during a charge sharing period in which the bit line pair is isolated from a memory power supply voltage. Prior to the charge sharing period, one of the bit lines in the bit line pair was charged to the memory power supply voltage whereas a remaining one was either fully or partially discharged. Charge thus flows from the charged bit line to the discharge bit line during the charge sharing period to precharge the bit lines for a current read or write operation.


Find Patent Forward Citations

Quick Actions:

Lee, Hochul. (2026). Bit line charge sharing for sram dynamic power savings (U.S. Patent No. 12784823). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12784823

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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