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For the Inventor, By the Inventor

San Diego, CA, United States of America

Anil Chowdary Kota

This inventor holds 27 USPTO granted patents and 9 published patent applications and 7 EPO patents, primarily in Memory Technology. Top assignees: Qualcomm Incorporated, Qualcomm Incorproated. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anil Chowdary Kota. Retrieved from https://idiyas.com/inventor/anil-chowdary-kota

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 81.5

 

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 38(Granted Patents)


Company Filing History:

goldMedal25 out of 45,002 
 
Qualcomm Incorporated
 patents
silverMedal1 out of 75 
 
Qualcomm Incorproated
 patents
where one patent can have more than one assignee

Years Active: 2013-2026

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Areas of Expertise:
Memory Redundancy
Parallel Write
Read-Only Memory
Sense Amplifier
Bitcell Design
One-Time Programmable
Fuse-Based Logic
Voltage Stress Reduction
Data Security
High-Speed Memory
N-Well Switching
Testing Circuits
27 patents (USPTO):Explore Patents
1. 12763114 - Circuit with a low-power charge-sharing light-sleep mode (2026-10-13),
2. 12665020 - Memory with double redundancy (2026-06-23),
3. 12633364 - Encoded read-only memory and decoder (2026-05-19),
4. 12633363 - Encoded read-only memory and decoder (2026-05-19),
5. 12451171 - High-speed and area-efficient parallel-write-and-read memory (2025-10-21),
6. 12125526 - Memory with bitcell power boosting (2024-10-22),
7. 12094528 - Memory with double redundancy (2024-09-17),
8. 11894050 - Memory with a sense amplifier isolation scheme for enhancing memory read bandwidth (2024-02-06),
9. 11854609 - Memory with reduced capacitance at a sense amplifier (2023-12-26),
10. 11763866 - SRAM with scan mode (2023-09-19),
11. 11670351 - Memory with single-ended sensing using reset-set latch (2023-06-06),
12. 11640835 - Memory device with built-in flexible double redundancy (2023-05-02),
13. 11568904 - Memory with positively boosted write multiplexer (2023-01-31),
14. 11250924 - One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methods (2022-02-15),
15. 11250895 - Systems and methods for driving wordlines using set-reset latches (2022-02-15),

Title: Anil Chowdary Kota: Innovator in Memory Technology

Introduction

Anil Chowdary Kota, based in San Diego, CA, is a prominent inventor in the field of memory technology. With an impressive portfolio of 22 patents, he has made significant contributions to advancements in memory systems.

Latest Patents

Among his latest innovations, two notable patents stand out. The first is a memory design featuring bitcell power boosting, which improves read margins by utilizing bitcell VDD boosting. This innovation incorporates a capacitor that serves dual purposes, offering both positive boosting for the bitcell VDD and negative boosting for the write driver. The second patent introduces a unique memory architecture with double redundancy. This design includes multiple column groups along with two redundant column groups, allowing for effective handling of defective columns by categorizing them into no-shift, one-shift, and two-shift regions. Each input/output circuit within this system is equipped with a switch matrix to optimize data signal management during write and read operations.

Career Highlights

Anil is currently associated with Qualcomm Incorporated, a leading company in semiconductor and telecommunications equipment. His work at Qualcomm focuses on developing cutting-edge memory technologies that aim to enhance performance and reliability.

Collaborations

Throughout his career, Anil has had the opportunity to collaborate with talented professionals, including Hochul Lee and Sei Seung Yoon. These collaborations have facilitated a productive exchange of ideas and innovations in memory technology.

Conclusion

Anil Chowdary Kota continues to be a driving force in the realm of memory technology through his innovative patents and collaboration with industry experts. His contributions, particularly in the areas of bitcell power boosting and redundancy in memory designs, highlight the ongoing evolution in this critical field of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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