IDiyas

For the Inventor, By the Inventor

San Diego, CA, United States of America

Anil Chowdary Kota

USPTO Granted Patents = 23 

 

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 33(Granted Patents)


Company Filing History:

goldMedal23 out of 41,326 
 
Qualcomm Incorporated
 patents

Years Active: 2013-2025

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23 patents (USPTO):
1. 12451171 - High-speed and area-efficient parallel-write-and-read memory (2025-10-21),
2. 12125526 - Memory with bitcell power boosting (2024-10-22),
3. 12094528 - Memory with double redundancy (2024-09-17),
4. 11894050 - Memory with a sense amplifier isolation scheme for enhancing memory read bandwidth (2024-02-06),
5. 11854609 - Memory with reduced capacitance at a sense amplifier (2023-12-26),
6. 11763866 - SRAM with scan mode (2023-09-19),
7. 11670351 - Memory with single-ended sensing using reset-set latch (2023-06-06),
8. 11640835 - Memory device with built-in flexible double redundancy (2023-05-02),
9. 11568904 - Memory with positively boosted write multiplexer (2023-01-31),
10. 11250924 - One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methods (2022-02-15),
11. 11250895 - Systems and methods for driving wordlines using set-reset latches (2022-02-15),
12. 11177010 - Bitcell for data redundancy (2021-11-16),
13. 11164610 - Memory device with built-in flexible double redundancy (2021-11-02),
14. 11152038 - Testing one-time programmable (OTP) memory with data input capture through sense amplifier circuit (2021-10-19),
15. 11114176 - Systems and methods to provide write termination for one time programmable memory cells (2021-09-07),

Title: Anil Chowdary Kota: Innovator in Memory Technology

Introduction

Anil Chowdary Kota, based in San Diego, CA, is a prominent inventor in the field of memory technology. With an impressive portfolio of 22 patents, he has made significant contributions to advancements in memory systems.

Latest Patents

Among his latest innovations, two notable patents stand out. The first is a memory design featuring bitcell power boosting, which improves read margins by utilizing bitcell VDD boosting. This innovation incorporates a capacitor that serves dual purposes, offering both positive boosting for the bitcell VDD and negative boosting for the write driver. The second patent introduces a unique memory architecture with double redundancy. This design includes multiple column groups along with two redundant column groups, allowing for effective handling of defective columns by categorizing them into no-shift, one-shift, and two-shift regions. Each input/output circuit within this system is equipped with a switch matrix to optimize data signal management during write and read operations.

Career Highlights

Anil is currently associated with Qualcomm Incorporated, a leading company in semiconductor and telecommunications equipment. His work at Qualcomm focuses on developing cutting-edge memory technologies that aim to enhance performance and reliability.

Collaborations

Throughout his career, Anil has had the opportunity to collaborate with talented professionals, including Hochul Lee and Sei Seung Yoon. These collaborations have facilitated a productive exchange of ideas and innovations in memory technology.

Conclusion

Anil Chowdary Kota continues to be a driving force in the realm of memory technology through his innovative patents and collaboration with industry experts. His contributions, particularly in the areas of bitcell power boosting and redundancy in memory designs, highlight the ongoing evolution in this critical field of technology.

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