The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Mar. 14, 2024
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Chulmin Jung, San Diego, CA (US);
Anil Chowdary Kota, San Diego, CA (US);
Kuk-Hwan Kim, San Diego, CA (US);
Sung Son, San Jose, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/12 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 17/126 (2013.01); G11C 17/12 (2013.01); G11C 11/5692 (2013.01);
Abstract
A drain programmed read-only memory includes a plurality of bit lines for each drain-programmed transistor. In addition, the drain-programmed read-only memory includes a pair of ground lines for each drain-programmed transistor. A decoder decodes a plurality of bits from each drain-programmed transistor by determining which bit line (if any) and which ground line is coupled to the drain-programmed transistor.