Suwon-si, South Korea

Ho Jin Kim

This inventor holds 4 USPTO granted patents. Top assignees: Samsung Electronics Ltd., Semes Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ho Jin Kim. Retrieved from https://idiyas.com/inventor/ho-jin-kim-nbva4dnm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.4

ph-index = 1


Company Filing History:


Years Active: 2026

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4 patents (USPTO):Explore Patents

Title: Ho Kim - Innovator in Plasma Processing Technology

Introduction

Ho Kim is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of plasma processing technology. His innovative work has led to the development of advanced systems that enhance substrate bonding methods.

Latest Patents

Ho Kim holds a patent for a "Plasma processing apparatus, substrate bonding system including the same, and substrate bonding method using the same." This patent includes a plasma processing apparatus that features a plasma process chamber with a process space, a load-lock chamber, and a first vacuum pump. The apparatus is designed to supply process gas and HO to the process space, facilitating efficient substrate bonding.

Career Highlights

Ho Kim is currently employed at Samsung Electronics Ltd., where he continues to push the boundaries of technology. His work focuses on improving plasma processing techniques, which are crucial for various applications in electronics manufacturing.

Collaborations

Throughout his career, Ho Kim has collaborated with talented individuals such as Inhwa Baek and Donggap Shin. These partnerships have fostered innovation and contributed to the success of their projects.

Conclusion

Ho Kim's contributions to plasma processing technology exemplify the spirit of innovation. His patent and work at Samsung Electronics Ltd. highlight his role as a key player in advancing substrate bonding methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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