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Hitoshi Negishi

This inventor holds 4 USPTO granted patents. Top assignees: Nec Corporation, Nec Compound Semiconductor Devices, Ltd.. Active years: 1997-2003.

USPTO Granted Patents = 4

% Patents Active = 100.0

Average Co-Inventor Count = 1.1

ph-index = 2

Forward Citations = 123(Granted Patents)

Company Filing History:

3 out of 36,653

Nec Corporation

Nec Compound Semiconductor Devices, Ltd.

Years Active: 1997-2003

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4 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6627473 - Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereof (2003-09-30),

2. 6100555 - Semiconductor device having a photosensitive organic film, and process (2000-08-08),

3. 6099640 - Molecular beam epitaxial growth method (2000-08-08),

4. 5635759 - Semiconductor device for mounting high-frequency element (1997-06-03),

Profile summary based on public USPTO records.

Please report any incorrect information to [email protected]

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