The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Nov. 02, 1999
Applicant:
Inventor:
Hitoshi Negishi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257284 ; 257280 ;
Abstract
A recess is made in the semiconductor substrate. A gate electrode has a sectional shape of 'T' to have a head overhanging portion and is made in the recess. The gate electrode having a head overhanging portion. A capacitance film is formed under the head overhanging portion of the gate electrode. An ohmic electrode is formed on the semiconductor substrate and at both sides of the gate electrode. In the device, the capacitance film is made of a photosensitive organic film having a smaller permittivity than that of silicon oxide films. This semiconductor device has a small gate parasitic capacitance and the variation in the capacitance can be reduced.