The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Sep. 03, 1998
Applicant:
Inventor:
Hitoshi Negishi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117105 ; 117107 ; 117108 ; 117953 ; 117954 ;
Abstract
A method of promoting evaporation of excess indium from a surface of an indium containing compound semiconductor single crystal layer during a discontinuation of a molecular beam epitaxial growth. Substantial supply of all elements for the indium containing compound semiconductor single crystal layer are stopped at least until a substrate temperature rises to a predetermined temperature of not less than an indium re-evaporation initiation temperature.