The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Nov. 14, 2000
Applicant:
Inventors:
Hirokazu Oikawa, Tokyo, JP;
Hitoshi Negishi, Tokyo, JP;
Assignee:
NEC Compound Semiconductor Devices, Ltd., Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/128 ; H01L 2/13205 ; H01L 8/1072 ; H01L 8/1109 ; H01L 8/10328 ; H01L 8/10336 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/128 ; H01L 2/13205 ; H01L 8/1072 ; H01L 8/1109 ; H01L 8/10328 ; H01L 8/10336 ;
Abstract
A high electron mobility transitor has a channel layer overlain by an electron supply layer held in contact with a gate electrode, and source/drain electrodes form ohmic contact together with cap layers, and resistive etching stopper are inserted between the cap layers and the electron supply layers for preventing the electron supply layer from over-etching, wherein extremely thin delta-doped layers are formed between the etching stopper layers and the electron supply layer so that the resistance between the electron supply layer and the source/drain electrodes are reduced.