Maebashi, Japan

Hitoshi Akamine

This inventor holds 32 USPTO granted patents, primarily in High Frequency Amplification. Top assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., Ltd., Hitachi Hybrid Network Co., Ltd.. Active years: 1991-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Akamine. Retrieved from https://idiyas.com/inventor/hitoshi-akamine

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 71.9

Average Co-Inventor Count = 4.2

ph-index = 11

Forward Citations = 379(Granted Patents)


Location History:

  • Takasaki, JP (1991)
  • Komoro, JP (2001)
  • Maebashi, JP (2002 - 2011)
  • Tokyo, JP (2010 - 2012)

Company Filing History:


Years Active: 1991-2012

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Areas of Expertise:
High Frequency Power Amplifier
Wireless Communication
Semiconductor Device
Integrated Circuit
Electronic Component
Amplifying Apparatus
Directional Coupler
Radio Communication
Electronics Parts
Signal Discriminating Device
High Frequency Circuit Module
Power Amplifier Module
32 patents (USPTO):Explore Patents

Title: The Inventive Mind of Hitoshi Akamine

Introduction:

Hitoshi Akamine, a talented inventor based in Maebashi, Japan, has made significant strides in the field of semiconductor devices. With an impressive portfolio of 32 patents, Hitoshi Akamine stands out as a pioneer in the industry, constantly pushing boundaries and exploring new possibilities in technology.

Latest Patents:

Among Hitoshi Akamine's latest patents is a groundbreaking technique for reducing higher harmonics in field-effect transistors, particularly those used in antenna switches. By adjusting the gate width of specific transistors within a meander structure and extending certain comb-like electrodes, he has successfully minimized the occurrence of unwanted harmonics, leading to improved performance and efficiency in semiconductor devices.

Another notable patent by Hitoshi Akamine involves a semiconductor device with a unique layout, featuring control electrode terminals and first electrode terminals arranged in a quadrangular configuration on the main surface of the semiconductor substrate. This innovative design allows for the creation of distinct transistor portions, enhancing the device's overall functionality and versatility.

Career Highlights:

Throughout his career, Hitoshi Akamine has made significant contributions to the industry while working at reputable companies such as Renesas Technology Corp. His expertise and dedication to innovation have earned him recognition as a leading figure in the development of advanced semiconductor technologies.

Collaborations:

Hitoshi Akamine has collaborated with esteemed colleagues, including Tetsuaki Adachi and Yasuhiro Nunogawa, who have played an essential role in bringing his inventive ideas to life. Together, they have worked on various projects, fostering a creative and collaborative environment that has led to numerous successful inventions and breakthroughs in the field.

Conclusion:

In conclusion, Hitoshi Akamine's inventive spirit and dedication to technological innovation have set him apart as a remarkable inventor in the semiconductor industry. With a diverse portfolio of patents and a proven track record of success, Hitoshi Akamine continues to drive progress and inspire future generations of innovators in the ever-evolving world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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