The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2007

Filed:

Sep. 16, 2005
Applicants:

Hitoshi Akamine, Maebashi, JP;

Masahiro Tsuchiya, Tokyo, JP;

Kyoichi Takahashi, Fujioka, JP;

Kazuhiro Koshio, Komoro, JP;

Inventors:

Hitoshi Akamine, Maebashi, JP;

Masahiro Tsuchiya, Tokyo, JP;

Kyoichi Takahashi, Fujioka, JP;

Kazuhiro Koshio, Komoro, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03G 5/16 (2006.01); H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, this invention enables preventing waveform distortion near the peak output power level by allowing sufficient idle currents to flow through the transistors for amplification, while enhancing the power efficiency in a low output power region. The power amplifier includes a detection circuit comprising a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage conversion means which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detection and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.


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