The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Sep. 23, 2009
Akishige Nakajima, Tokyo, JP;
Yasushi Shigeno, Tokyo, JP;
Hitoshi Akamine, Tokyo, JP;
Tsutomu Kobori, Tokyo, JP;
Izumi Arai, Tokyo, JP;
Kazuto Tajima, Tokyo, JP;
Tomoyuki Ishikawa, Tokyo, JP;
Jyun Funaki, Tokyo, JP;
Akishige Nakajima, Tokyo, JP;
Yasushi Shigeno, Tokyo, JP;
Hitoshi Akamine, Tokyo, JP;
Tsutomu Kobori, Tokyo, JP;
Izumi Arai, Tokyo, JP;
Kazuto Tajima, Tokyo, JP;
Tomoyuki Ishikawa, Tokyo, JP;
Jyun Funaki, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes.