Sendai, Japan

Hitoshi Abe

This inventor holds 7 USPTO granted patents. Top assignees: Research Development Corporation of Japan, Oki Electric Industry Co., Ltd., Oki Electric Co., Ltd.. Active years: 1989-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Abe. Retrieved from https://idiyas.com/inventor/hitoshi-abe-o6vi0iz1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.3

ph-index = 5

Forward Citations = 570(Granted Patents)


Location History:

  • Sendai, JP (1993 - 1995)
  • Miyai-ken, JP (1997)
  • Sendai-shi, Miyagi-ken, JP (1989 - 2002)

Company Filing History:


Years Active: 1989-2002

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7 patents (USPTO):Explore Patents

Title: Hitoshi Abe: Innovator in Semiconductor Technology

Introduction

Hitoshi Abe is a prominent inventor based in Sendai, Japan, known for his significant contributions to semiconductor technology. With a total of seven patents to his name, Abe has made remarkable advancements in the field of crystal growth apparatuses.

Latest Patents

One of his latest patents is a semiconductor crystal growth apparatus. This innovative device allows a substrate to be heated in a crystal growth vessel that is evacuated to an ultrahigh vacuum. Gases containing the component elements of the crystal are introduced into the vessel under predetermined conditions, enabling the successive epitaxial growth of single molecular layers. The number of growth cycles is automatically controlled, and a mass analyzer is positioned opposite the substrate to continuously trace and evaluate the progress of crystal growth for each molecular layer. Another notable patent is for an apparatus for forming semiconductor crystals. In this apparatus, a substrate is heated in a growth vessel also evacuated to an ultrahigh vacuum. Gas containing the component elements of the semiconductor is introduced from external sources, while radiation of a specific wavelength is directed onto the substrate from an external irradiation source.

Career Highlights

Throughout his career, Hitoshi Abe has worked with various organizations, including the Research Development Corporation of Japan. His work has significantly impacted the semiconductor industry, particularly in the development of advanced crystal growth techniques.

Collaborations

Abe has collaborated with notable figures in the field, including Junichi Nishizawa and Soubei Suzuki. Their combined expertise has contributed to the advancement of semiconductor technologies.

Conclusion

Hitoshi Abe's innovative work in semiconductor technology has led to significant advancements in crystal growth apparatuses. His contributions continue to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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