The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1994
Filed:
Jan. 12, 1993
Applicant:
Inventors:
Junichi Nishizawa, Sandai-shi, Miyagi-ken, JP;
Hitoshi Abe, Sendai, JP;
Soubei Suzuki, Sendai-shi, Miyagi-ken, JP;
Assignees:
Research Development Corporation of Japan, Tokyo, JP;
Other;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156610 ; 156611 ; 156613 ; 156614 ; 156D / ; 156D / ; 437108 ; 437241 ; 4272551 ;
Abstract
The thickness of a thin film of an element semiconductor may be determined by counting the number of cycles of gaseous component introductions within a crystal growth vessel. Each cycle permits at most one monolayer of growth since the pressure in the vessel during gaseous component introduction is maintained under a saturation condition. The temperature to which a substrate in the vessel is heated is that for which epitaxial growth results.