The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Jun. 07, 1995
Applicant:
Inventors:
Junichi Nishizawa, Sendai-shi, Miyagi-ken, JP;
Hitoshi Abe, Sendai-shi, Miyagi-ken, JP;
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
G23C 1/622 ;
U.S. Cl.
CPC ...
G23C 1/622 ;
Abstract
In a semiconductor crystal growth apparatus, a substrate is heated in a growth vessel evacuated to a ultrahigh vacuum, and gas containing component elements of a semiconductor which should grow on the substrate are introduced into the growth vessel from external gas sources. Radiation having a specific wavelength is directed from an external irradiation source toward and onto the substrate.